Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). David Redfield, Richard H. Bube

Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)



Download Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)



Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) David Redfield, Richard H. Bube. pdf ebook
Publisher:
Language: English
Page: 240
ISBN: 0521024455, 9780511622533

Review

"This book by Redfield and Bube gives a comprehensive review of the subject. In my opinion, the authors review the most important PI defects in crystalline and amorphous semiconductors, focusing on existing models without mathematical complications and emphasizing the need for more sophisticated many-electron models....invaluable as an introduction for those who are new to the field and for graduate students." J. Abdulhalim, Optics & Photonics News

Book Description

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.The properties of DX and EL2 centers in IIISHV compounds are presented and a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The effects of such defects in a number of devices are discussed.



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